Comparative study on dry etching of alpha- and beta-SiC nano-pillars
نویسندگان
چکیده
Different polytypes (α-SiC and β-SiC) and crystallographic orientations ((0001) and (11-20) of 6H-SiC) have been used in order to elaborate Silicon Carbide (SiC) nanopillars using inductively coupled plasma etching method. The cross section of the SiC pillars shows a rhombus, pentagon, or hexagonal morphology depending on polytypes and crystallographic orientations. The favored morphologies of SiC nanopillars are originated from a complex interplay between their polytypes and crystal orientations, which reflects the so-called Wulff's rule.
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